Product Summary

The BFQ135 is a NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base.

Parametrics

BFQ135 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 25 V; (2)VCEO collector-emitter voltage open base: 19 V; (3)VEBO emitter-base voltage open collector: 2 V; (4)IC collector current (DC): 150 mA; (5)Ptot total power dissipation : 2.7 W; (6)Tstg storage temperature: -65 +150 ℃; (7)Tj junction temperature: 200 ℃.

Features

BFQ135 features: (1)Optimum temperature profile; (2)excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich metallization.

Diagrams

BFQ135 test circuit

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BFQ135
BFQ135

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BFQ131
BFQ131

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BFQ135
BFQ135

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BFQ136
BFQ136

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BFQ149
BFQ149

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BFQ149,115
BFQ149,115

NXP Semiconductors

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Data Sheet

0-1: $0.56
1-25: $0.34
25-100: $0.28
100-250: $0.26
BFQ151
BFQ151

Other


Data Sheet

Negotiable