(China (Mainland))
Product Summary
The BFQ135 is a NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base.
Parametrics
BFQ135 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 25 V; (2)VCEO collector-emitter voltage open base: 19 V; (3)VEBO emitter-base voltage open collector: 2 V; (4)IC collector current (DC): 150 mA; (5)Ptot total power dissipation : 2.7 W; (6)Tstg storage temperature: -65 +150 ℃; (7)Tj junction temperature: 200 ℃.
Features
BFQ135 features: (1)Optimum temperature profile; (2)excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich metallization.
Diagrams
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 BFQ135 |
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Data Sheet |
Negotiable |
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BFQ131 |
Other |
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Negotiable |
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BFQ135 |
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Data Sheet |
Negotiable |
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BFQ136 |
Other |
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Data Sheet |
Negotiable |
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BFQ149 |
Other |
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Data Sheet |
Negotiable |
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BFQ149,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal PNP 15V 100mA 5GHZ |
Data Sheet |
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BFQ151 |
Other |
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Data Sheet |
Negotiable |
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