Product Summary

The APT30M19JVFR is a high voltage N-Channel enhancement mode power MOSFET. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. The APT30M19JVFR also achieves faster switching speeds through optimized gate layout.

Parametrics

APT30M19JVFR absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 300V; (2)Continuous Drain Current at TC = 25℃, ID: 130A; (3)Pulsed Drain Current, IDM: 520A; (4)Gate-Source Voltage Continuous, VGS: ±30V; (5)Gate-Source Voltage Transient, VGSM: ±40V; (6)Total Power Dissipation at TC = 25℃, PD: 700W; (7)Linear Derating Factor: 5.6W/℃; (8)Operating and Storage Junction Temperature Range, Tj, Tstg: -55 to 150℃; (9)Lead Temperature: 0.063 from Case for 10 Sec, TL: 300℃; (10)Avalanche Current (Repetitive and Non-Repetitive), IAR: 130A; (11)Repetitive Avalanche Energy, EAR: 50mJ; (12)Single Pulse Avalanche Energy, EAS: 3600mJ.

Features

APT30M19JVFR features: (1)Fast Recovery Body Diode; (2)100% Avalanche Tested; (3)Lower Leakage; (4)Popular SOT-227 Package; (5)Faster Switching.

Diagrams

APT30M19JVFR circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
APT30M19JVFR
APT30M19JVFR

MOSFET N-CH 300V 130A SOT-227
Data Sheet
0-10: $34.53
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
APT30D100BCAG
APT30D100BCAG

DIODE ULT FAST 2X18A 1000V TO247
Data Sheet
Negotiable 
APT30D100BCT
APT30D100BCT
Other

Data Sheet
Negotiable 
APT30D100BG
APT30D100BG

DIODE ULT FAST 30A 1000V TO-247
Data Sheet
0-1: $2.66
1-10: $2.38
10-100: $1.95
100-250: $1.76
250-500: $1.58
500-1000: $1.33
1000-2500: $1.27
2500-5000: $1.21
5000-10000: $1.18
APT30D100BHB
APT30D100BHB
Other

Data Sheet
Negotiable 
APT30D100SG
APT30D100SG

DIODE ULT FAST 30A 1000V D3PAK
Data Sheet
0-60: $2.54
APT30D120B
APT30D120B
Other

Data Sheet
Negotiable