(China (Mainland))
Product Summary
The APT30M19JVFR is a high voltage N-Channel enhancement mode power MOSFET. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. The APT30M19JVFR also achieves faster switching speeds through optimized gate layout.
Parametrics
APT30M19JVFR absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 300V; (2)Continuous Drain Current at TC = 25℃, ID: 130A; (3)Pulsed Drain Current, IDM: 520A; (4)Gate-Source Voltage Continuous, VGS: ±30V; (5)Gate-Source Voltage Transient, VGSM: ±40V; (6)Total Power Dissipation at TC = 25℃, PD: 700W; (7)Linear Derating Factor: 5.6W/℃; (8)Operating and Storage Junction Temperature Range, Tj, Tstg: -55 to 150℃; (9)Lead Temperature: 0.063 from Case for 10 Sec, TL: 300℃; (10)Avalanche Current (Repetitive and Non-Repetitive), IAR: 130A; (11)Repetitive Avalanche Energy, EAR: 50mJ; (12)Single Pulse Avalanche Energy, EAS: 3600mJ.
Features
APT30M19JVFR features: (1)Fast Recovery Body Diode; (2)100% Avalanche Tested; (3)Lower Leakage; (4)Popular SOT-227 Package; (5)Faster Switching.
Diagrams
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MOSFET N-CH 300V 130A SOT-227 |
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