(China (Mainland))
Product Summary
The BLF246B is a VHF power MOS transistor. Silicon N-channel enhancement mode vertical D-MOS transistor BLF246B encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads of the BLF246B are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of the handbook for further information.
Parametrics
BLF246 absolute maximum ratings: (1)VDS drain-source voltage:65 V; (2)VGS gate-source voltage:±20 V; (3)ID DC drain current: 13 A; (4)Ptot total power dissipation Tamb ≤ 25 ℃: 130 W; (5)Tstg storage temperature: -65 +150 ℃; (6)Tj junction temperature: 200 ℃.
Features
BLF246 features: (1)High power gain; (2)Low noise figure; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF246B,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 60W VHF P-P |
Data Sheet |
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