Product Summary
The DDB6U104N16RR is a diode module with chopper-IGBT.
Parametrics
DDB6U104N16RR absolute maximum ratings: (1)Ausgangsstrom output current Id: TC = 100℃ 85 A; TC = 84℃: 104 A; (2)Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES: 1200 V; (3)Kollektor-Dauergleichstrom DC-collector current IC: 50 A; (4)Periodischer Kollektor-Spitzenstrom repetitive peak collektor current tp = 1ms ICRM: 100 A; (5)Ersatzwiderstand forward slope resistance Tvj = Tvj max rT: 5,5 mΩ; (6)Sperrstrom reverse current Tvj = Tvj max, vR = VRRM iR: 5 mA; (7)Betriebstemperatur operating temperature Tc op: - 40 to +150 ℃.
Features
DDB6U104N16RR features: (1)Innere Isolation internal insulation Al2O3; (2)Anzugsdrehmoment für mechanische Befestigung mounting torque: Toleranz / tolerance ±15% M1 4 Nm; (3)Gewicht weight G typ. 185 g; (4)Kriechstrecke creepage distance 12,5 mm.
Diagrams
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![]() DDB6U100N12RR |
![]() Infineon Technologies |
![]() Discrete Semiconductor Modules 1200V 100A UN-CNTL |
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![]() |
![]() DDB6U100N16R |
![]() Infineon Technologies |
![]() Discrete Semiconductor Modules 1600V 100A UN-CNTL |
![]() Data Sheet |
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![]() |
![]() DDB6U100N16RR |
![]() Infineon Technologies |
![]() Discrete Semiconductor Modules 1600V 100A UN-CNTL |
![]() Data Sheet |
![]()
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![]() |
![]() DDB6U104N16RR |
![]() Infineon Technologies |
![]() Discrete Semiconductor Modules 1600V 105A UN-CNTL |
![]() Data Sheet |
![]()
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![]() |
![]() DDB6U104N18RR |
![]() Infineon Technologies |
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