Product Summary
The MRF422 is a RF line NPN silicon power transistor.
Parametrics
MRF422 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 40 Vdc; (2)Collector–Base Voltage, VCBO: 85 Vdc; (3)Emitter–Base Voltage, VEBO: 3.0 Vdc; (4)Collector Current, Continuous, IC: 20 Adc; (5)Withstand Current, 10 s:30 Adc; (6)Total Device Dissipation, PD: 290W at TC = 25℃; 1.66W/℃; (7)Storage Temperature Range, Tstg: –65 to +150℃.
Features
MRF422 features: (1)Specified 28 Volt, 30 MHz Characteristics: Output Power = 150 W (PEP); Minimum Gain = 10 dB; Efficiency = 40%; (2)Intermodulation Distortion @ 150 W (PEP): IMD = –30 dB (Min); (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR.
Diagrams
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![]() MRF422 |
![]() M/A-COM Technology Solutions |
![]() Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB |
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![]() MRF422 |
![]() M/A-COM Technology Solutions |
![]() Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB |
![]() Data Sheet |
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