(China (Mainland))
Product Summary
The MRFE6P3300H is a RF power field effect transistor of N-channel enhancement-mode lateral. The MRFE6P3300H is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 32 volt analog or digital television transmitter equipment.
Parametrics
MRFE6P3300H absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5 to +66 Vdc; (2)Gate-Source Voltage, VGS: -0.5 to +12 Vdc; (3)Storage Temperature Range, Tstg: -65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 225℃.
Features
MRFE6P3300H features: (1)Typical Narrowband Two-Tone Performance; (2)Power Gain: 20.4 dB; (3)Drain Efficiency: 44.8%; (4)IMD: –28.8 dBc; (5)Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness; (6)Characterized with Series Equivalent Large–Signal Impedance Parameters; (7)Internally Matched for Ease of Use; (8)Designed for Push-Pull Operation Only; (9)Qualified Up to a Maximum of 32 VDD Operation; (10)Integrated ESD Protection; (11)RoHS Compliant; (12)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MRFE6P3300HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |
Data Sheet |
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MRFE6P3300HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |
Data Sheet |
Negotiable |
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