(China (Mainland))
Product Summary
The BSM200GA120DN2C is an IGBT Power Module.
Parametrics
BSM200GA120DN2C absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20 V; (4)DC collector current TC = 25 °C: 300A; (5)DC collector current TC = 80 °C: 200A; (6)Pulsed collector current, tp = 1 ms TC = 25 °C: 600A; (7)Pulsed collector current, tp = 1 ms TC = 80 °C: 400A; (8)Power dissipation per IGBT TC = 25 °C Ptot: 1550 W; (9)Chip temperature Tj: + 150 °C; (10)Storage temperature Tstg: -40 TO + 125°C; (11)Thermal resistance, chip case RthJC: ≦ 0.08 K/W; (12)Diode thermal resistance, chip case RthJCD: ≦ 0.15; (13)Insulation test voltage, t = 1min. Vis: 2500 Vac; (14)Creepage distance: 20 mm; (15)Clearance: 11mm; (16)DIN humidity category, DIN 40 040: F sec; (17)IEC climatic category, DIN IEC 68-1: 40 / 125 / 56sec.
Features
BSM200GA120DN2C features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
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 BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120D |
Other |
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Data Sheet |
Negotiable |
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BSM200GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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