Product Summary

The FB180SA10 is the fifth generation, high current density HEXFET. It is paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package of FB180SA10 is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry.

Parametrics

FB180SA10 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 180A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 120 A; (3)IDM Pulsed Drain Current: 720A; (4)PD @TC = 25℃ Power Dissipation: 480 W; (5)Linear Derating Factor: 2.7 W/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 700 mJ; (8)IAR Avalanche Current:180 A; (9)EAR Repetitive Avalanche Energy: 48 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.7 V/ns; (11)TJ Operating Junction and TSTG: -55 to + 150 ℃; (12)VISO Insulation Withstand Voltage (AC-RMS): 2.5 kV; (13)Mounting torque, M4 srew: 1.3 N.m.

Features

FB180SA10 features: (1)Fully Isolated Package; (2)Easy to Use and Parallel; (3)Very Low On-Resistance; (4)Dynamic dv/dt Rating; (5)Fully Avalanche Rated; (6)Simple Drive Requirements; (7)Low Drain to Case Capacitance; (8)Low InternaInductance.

Diagrams

FB180SA10 circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FB180SA10
FB180SA10

MOSFET N-CH 100V 180A SOT-227
Data Sheet
Negotiable 
FB180SA10P
FB180SA10P
Other

Data Sheet
Negotiable