(China (Mainland))
Product Summary
The FF800R12KF4 is an IGBT-CONVERTER.
Parametrics
FF800R12KF4 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200 V; (2)DC-collector current, IC: 800 A; (3)repetitive peak collctor current, ICRM: 1600 A; (4)total power dissipation, Ptot: 5000 W; (5)gate-emitter peak voltage, VGE: ± 20 V; (6)DC forward current, IF: 800 A; (7)repetitive peak forw. current, IFRM: 1600 A; (8)insulation test voltage, VISOL: 2,5 kV.
Features
FF800R12KF4 features: (1)collector-emitter saturation voltage, VCE sat: 2.7 to 3.2V; (2)gate threshold voltage: 4.5 to 6.5V; (3)input capacity, Cies: 55nF; (4)collector-emitter cut-off current, iCES: 16mA; (5)gate leakage current, iGES: 400nA; (6)gate leakage current, iEGS: 400nA; (7)turn-on time (restistive load), ton: 0.7μs; (8)storage time (inductive load), ts: 0.9μs; (9)fall time (inductive load), tf: 0.10μs; (10)turn-on energy loss per pulse, Eon: 130mW; (11)turn-off energy loss per pulse, Eoff: 120mW.
Diagrams
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 FF800R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 800A DUAL |
Data Sheet |
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IGBT Modules 1200V 800A DUAL |
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FF800R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 800A DUAL |
Data Sheet |
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