(China (Mainland))
Product Summary
The PTFA192001E is a 200-watt LDMOS FET intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with advanced LDMOS process, the PTFA192001E provides excellent thermal performance and superior reliability.
Parametrics
PTFA192001E absolute maximum ratings: (1)Drain-Source Voltage VDSS: 65 V; (2)Gate-Source Voltage VGS: –0.5 to +12 V; (3)Junction Temperature TJ: 200 ℃; (4)Total Device Dissipation PD: 625 W; (5)Above 25℃ derate by: 3.57 W/℃; (6)Storage Temperature Range TSTG: –40 to +150 ℃; (7)Thermal Resistance (TCASE = 70℃, 200 W CW) RqJC: 0.28 ℃/W.
Features
PTFA192001E features: (1)Pb-free, RoHS-compliant and thermally-enhanced packages; (2)Broadband internal matching; (3)Typical two-carrier WCDMA performance at 1990 MHz, 30 V; (4)Typical single-carrier WCDMA performance at 1960MHz, 30 V, 3GPP signal, P/AR = 7.5 dB; (5)Typical CW performance, 1960 MHz, 30 V; (6)Integrated ESD protection: Human Body Model, Class 2(minimum); (7)Excellent thermal stability, low HCI drift; (8)Capable of handling 5:1 VSWR @ 30 V, 200 W(CW) output power.
Diagrams
| Image | Part No | Mfg | Description |  |
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 PTFA192001E V4 |
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IC FET RF LDMOS 200W H-36260-2 |
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PTFA192001E V4 R250 |
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IC FET RF LDMOS 200W H-36260-2 |
Data Sheet |
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