(China (Mainland))
Product Summary
The FS75R12KT3 is an IGBT-Module.
Parametrics
FS75R12KT3 absolute maximum ratings: (1)collector emitter voltage: 1200 V; (2)DC collector current: 75 to 105A; (3)repetitive peak collector current: 150A; (4)total power dissipation: 355W; (5)gate emitter peak voltage: +/- 20V.
Features
FS75R12KT3 features: (1)rated resistance: 5kΩ; (2)power dissipation: 20 mW; (3)B-value: 3375K; (4)maximum junction temperature: 150℃; (5)operation temperature: -40 to 125℃; (6)storage temperature: -40 to 125℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FS75R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
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FS75R12KT3G |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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