Product Summary

The FZ800R12KS4 is an IGBT Power Module.

Parametrics

FZ800R12KS4 absolute maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES: 1200 V; (2)Kollektor-Dauergleichstrom DC-collector current TC = 80℃ IC,nom. 800 A, TC = 25 ℃ IC 1200 A; (3)Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80℃ ICRM: 1600 A; (4)Gesamt-Verlustleistung total power dissipation TC=25℃, Transistor Ptot: 6,9 kW; (5)Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES: +/- 20V V; (6)Dauergleichstrom DC forward current IF: 800 A; (7)Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms IFRM: 1600 A; (8)Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125℃ I2t: 185 A2s; (9)Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL: 2.500 V.

Features

FZ800R12KS4 features: (1)Gateladung gate charge VGE = -15V ... + 15V, VCE = 600V QG - 8,4 μC; (2)Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25℃ IGES 400 nA; (3)Modulinduktivitat stray inductance module LsCE 12 nH; (4)Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip t.b.d. mW.

Diagrams

FZ800R12KS4 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FZ800R12KS4_B2
FZ800R12KS4_B2

Infineon Technologies

IGBT Modules N-CH 1.2KV 1.2KA

Data Sheet

0-2: $549.91
2-10: $494.90
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
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FZ800R12KE3

Infineon Technologies

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Data Sheet

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6-10: $119.36
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FZ800R12KF4

Infineon Technologies

IGBT Modules 1200V 800A SINGLE

Data Sheet

0-2: $358.98
2-3: $323.08
3-5: $287.19
5-10: $274.90
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0-2: $555.60
2-10: $501.00
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Infineon Technologies

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Data Sheet

0-1: $358.67
1-3: $322.24
3-5: $286.43
5-10: $268.53
FZ800R12KS4_B2
FZ800R12KS4_B2

Infineon Technologies

IGBT Modules N-CH 1.2KV 1.2KA

Data Sheet

0-2: $549.91
2-10: $494.90
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Data Sheet

0-2: $462.20
2-3: $416.35
3-5: $370.09
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