Product Summary

The MG50Q6ES40 is an N Channel IGBT. Applications of the MG50Q6ES40 are high power switching applications. motor control.


Parametrics

MG50Q6ES40 absolute maximum ratings: (1)Colleetor-Emitter Voltage VCES: 1200 V; (2)Gate-Emitter Voltage VGES: + 20 V; (3)Collector Power Dissipation (Te = 25℃) PC: 250 W; (4)Junction Temperature Tj: 150 ℃; (5)Storage Temperature Range Tstg: -40-125 ℃; (6)Isolation Voltage vIsol: 2500 (AC 1 minute) V; (7)Screw Torque (Terminal / Mounting): 2/3 N·m.

Features

MG50Q6ES40 features: (1)The Electrodes are Isolated from Case.; (2)6 IGBTs are Built Into 1 Package.; (3)Enhancement-Mode; (4)Low Saturation Voltage: VCE (sat) =4.0V (Max.); (5)High Speed : tf= 0.5^ (Max.).

Diagrams

MG50Q6ES40 pin connection

MG50Q2YS40
MG50Q2YS40
Other

Data Sheet
Negotiable