Product Summary

The MG500Q1US11 is a TOSHIBA GTR module with Silicon N Channel IGBT. Some specifications of this device are as follows:(1)Number of Digits: 20; (2)Number of Segments:160; (3)Package / Case:VSO-56; (4)Maximum Clock Frequency:400 KHz; (5)Operating Supply Voltage:8.50V; (6)Maximum Supply Current:0.12 mA; (7)Maximum Power Dissipation:400 mW. The MG500Q1US1 is applied in DC motor control, nc equipment, ac motor control, contactless switches, electric furnace temperature control, light dimmers, welder and so on.

Parametrics

MG500Q1US11 absolute maximum ratings (ta = 25℃): (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current: IC: 500A at DC; ICP: 1000A at 1ms; (4)Forward current:IF: 500A at DC;IFM: 1000A at 1ms; (5)Collector power dissipation (Tc = 25℃), PC: 2400 W; (6)Junction temperature, Tj: 150 ℃; (7)Storage temperature range: -40 ~ 125 ℃; (8)Isolation voltage, VIsol:2500(AC, 1 min) V; (9)Screw torque (Terminal : M4 / M6 / mounting):2 / 3 / 3 N.m.

Features

MG500Q1US11 features: (1)High input impedance; (2)High speed : tf = 0.5μs (Max); (3)Low saturation voltage: VCE (sat) = 4.0V (Max); (4)Enhancement-mode; (5)The electrodes are isolated from case.

Diagrams

MG500Q1US11 equivalent circuit

MG50Q2YS40
MG50Q2YS40
Other

Data Sheet
Negotiable